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PDF BAP64-04 Data sheet ( Hoja de datos )
| Número de pieza | BAP64-04 | |
| Descripción | Silicon PIN diode | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Silicon PIN diode
BAP64-04
Diodes
Features
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
Ts = 90
storage temperature
junction temperature
thermal resistance from junction to soldering point
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Symbol
VR
IF
Ptot
Tstg
Tj
Rth j-s
Min
-65
-65
Max
175
100
250
+150
+150
220
Unit
V
mA
mW
K/W
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min Typ Max Unit
forward voltage
VF
IF = 50 mA
0.95 1.1
V
reverse leakage current
VR
VR = 175 V
VR = 20 V
10
A
1
VR = 0; f = 1 MHz
0.52 pF
diode capacitance Cd VR = 1 V; f = 1 MHz
0.37 0.5
pF
VR = 20 V; f = 1 MHz
0.23 0.35
pF
IF = 0.5 mA; f = 100 MHz; note 1
20 40
IF = 1 mA; f = 100 MHz; note 1
diode forward resistance
rD
IF = 10 mA; f = 100 MHz; note 1
10 20
2 3.8
IF = 100 mA; f = 100 MHz; note 1
0.7 1.35
charge carrier life time
when switched from IF = 10 mA to
L
IR = 6mA; RL = 100 ,measured at IR = 3 mA
1.55
S
series inductance
LS
1.4 nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
4Kp
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