|
|
Numéro de référence | VS-30CPQ040-N3 | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | Vishay | ||
Logo | |||
1 Page
VS-30CPQ0...PbF Series, VS-30CPQ0...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
TO-247AC
13
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-247AC
2 x 15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
Common cathode
20 mJ
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF 15 Apk, TJ = 125 °C (per leg)
TJ
VALUES
30
35 to 45
1020
0.50
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
30CPQ035PbF
Maximum DC
reverse voltage
Maximum working
peak reverse voltage
VR
VRWM
35
VS-
30CPQ035-N3
35
VS-
30CPQ040PbF
40
VS-
30CPQ040-N3
40
VS-
30CPQ045PbF
45
VS-
30CPQ045-N3
UNITS
45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 124 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 3 A, L = 4.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
30
1020
265
20
3
UNITS
A
mJ
A
Revision: 01-Sep-11
1 Document Number: 94182
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
|||
Pages | Pages 7 | ||
Télécharger | [ VS-30CPQ040-N3 ] |
No | Description détaillée | Fabricant |
VS-30CPQ040-N3 | Schottky Rectifier ( Diode ) | Vishay |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |