DataSheetWiki


VS-100BGQ100 fiches techniques PDF

Vishay - Schottky Rectifier ( Diode )

Numéro de référence VS-100BGQ100
Description Schottky Rectifier ( Diode )
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





VS-100BGQ100 fiche technique
www.vishay.com
VS-100BGQ100
Vishay Semiconductors
Schottky Rectifier, 100 A
Cathode
Anode
PowerTab®
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
PowerTab®
100 A
100 V
0.82 V
180 mA at 125 °C
175 °C
Single die
9 mJ
FEATURES
• 175 °C max. operating junction temperature
• High frequency operation
• Low forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab® package
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ100 Schottky rectifier has been optimized
for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
TC
IFSM tp = 5 μs sine
100 Apk (typical)
VF
TJ
TJ Range
VALUES
100
124
100
6300
0.77
125
- 55 to 175
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
100BGQ100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 124 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 2 A, L = 4.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
100
6300
800
9
2
UNITS
A
A
mJ
A
Revision: 17-Jun-11
1 Document Number: 94581
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 7
Télécharger [ VS-100BGQ100 ]


Fiche technique recommandé

No Description détaillée Fabricant
VS-100BGQ100 Schottky Rectifier ( Diode ) Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche