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دیتاشیت - WILLAS - Plastic-Encapsulate Diodes

شماره قطعه BAW56
شرح مفصل Plastic-Encapsulate Diodes
تولید کننده WILLAS 
آرم WILLAS 


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BAW56 شرح
WILLAS
SO1.0TA-2SU3RFPAlCaEsMtOicUN-ET SnCcHaOTpTsKYuBlaARteRIEDRiRoEdCTeIFsIERS -20V- 200V
SOD-123+ PACKAGE
BAV70FM120-M+
BAV99 THRU
BAW5F6M1200-M+
Pb Free Product
Features
SWITCHINBGatcDhIpOroDcEess design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURELSow profile surface mounted application in order to
z Fast SLowopwtitimcphioziwneegbroSlaorpsdse,sehpdiagchee. fficiency.
z For GeHnigehrcaul rPreunrtpcoapsaebSiliwty,itlcohwinfogrwAaprdpvlioclatatgioendsrop.
z HighCHoignhdsuucrgtaenccaepability.
z Pb-F••reUGelutraparadhrciignkhga-sfgopereoeivdsesravwvoitalctaihlgianebgp.lreotection.
RoHSSpilriocodnuecpt iftoaxriaplapclakninagr cchoipd, emestuaflfsixilicGonjunction.
HalogeLneafdr-efreeeprpoadrtus cmtefeotrepnavicrokninmgenctoadl setasnudfafirxds“Hof
z MoistuRMroIeHL-SSSpTerDnod-s1uic9tt5ivf0oi0rtpy/2aLc2k8einvgeclo1de suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Package outline
SOSDO-1T2-32H3
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
Terminals
:Plated
terminals,
solderable
per
,
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
BAW56 MPaorlkairnitgy:: AIn1dicated by BcaAthVo7d0e bMaandrking: A4
MaximumMRouanttiinnggPso@sitTioan=: 2A5ny
Weight : Approximated 0.011 gram
BAV99 Marking: A7 Dimensions in inches and (millimeters)
PMaAraXmIMeUteMr RATINGS AND ELESCyTmRbIColAL CHARACTERISTICSLimit
Unit
ReveRrastiengVsoaltta2g5e℃ ambient temperature unless otherwise speVcRified.
Single phase half wave, 60Hz, resistive of inductive load.
Fo rwFaorrdcaCpuacrirteivnetload, derate current by 20%
IF
70
200
V
mA
Peak Forward Surge CRuArrTeINnGt S
SYMIBFMO(LsuFrgMe1) 20-MH FM130-MH FM140-MH FM150-5M0H0FM160-MH FM180-MH FM1100-MH FM11m50A-MH FM1200-MH U
PowMMeaarrxkiDminiugsmsCioRpdeaectuiorrnent Peak Reverse Voltage
VRRM PD
12
20
13
30
14
40
15 225 16
50 60
18
80
10
100
11m5105W
120
200
V
TheMrmaxaiml uRmesRiMsStaVnoclteagJeunction to Ambient
VRMSRθJA 14 21 28 35 556 42
56 70
105/W 140 V
JunMctaixoimnuTmeDmCpBelroacktuinrgeVoltage
Maximum Average Forward Rectified Current
St orage Temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
ElesucpterriimcpaolseCd honarrataedcltoeadri(sJEtDicEsC
Typical Thermal Resistance (Note
2m@)etThoad=) 25
VDC TJ
IO
  TSTG
IFSM
RΘJA
20
Typical JunctionPCaarpaamciteatnecre (Note 1)
Operating Temperature Range
SymbCToJJl
Min
30 40
 
 
-5T5ytpo +125 Max
50 150 60
1.0
-55~+150  
30
40
120
Unit  
80 100
 
 
Co-n55dittoio+n1s50
150
200
 
V
A
A
RSetvoerargseeTbermepaekradtuorwe Rnavnogletage
 
CHARACTERISTICS
V TRSTG
70
V -I6R5=1to00+1μ7A5
VSF1YMBOL
FM120-MH
FM130-MH
0.715
FM140-MH
FM15V0-MH
FMI1F6=0-1MmHAFM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
U
Maximum Forward Voltage at 1.0A DC
FoMrawxiamrudmvAovletraaggee Reverse Current at
Rated DC Blocking Voltage
VF2 VF
@T A=25℃
@T A=125℃
VF3
IR
0.500.855
1
V 0.70 IF=10mA
0.5
V IF=1500mA
0.85
0.9 0.92 V
 
m
 
NOTES:
VF4
R1e- vMeerassuerecduartr1eMnHt Z and applied reverse voltage of 4.0 VDIRC.
1.25
2.5
V IF=150mA
μA VR=70V
 C2a- pTahecrimtaalnRceesisbtaentcwe eFeronmtJeurnmctiionnatolsAmbient
 
Reverse recovery time
CT
t rr
1.5 pF VR=0,f=1MHz
IF = IR = 10mA,
6 ns
Irr= 0.1 x IR, RL = 100
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.

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