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Numéro de référence | BAV19 | ||
Description | High Voltage Surface Mount Switching Diode | ||
Fabricant | LGE | ||
Logo | |||
1 Page
BAV19/BAV20/BAV21
High Voltage Surface Mount Switching Diode
DO-35
Features
Fast switching speed
General purpose rectification
Silicon epitaxial planar construction
Mechanical Data
Case: DO-35
Polarity: Cathode band
Marking: Type number
Weight: 0.13 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage Working Peak
Reverse Voltage DC Blocking Voltage
Rectifier Current (Average) Half Wave
Rectification with Resist Load at Tamb=25OC and
f > 50Hz
Non-Repetitive Peak Forward Surge Current
@ t=1.0s and Tj=25oC
Power Dissipation (Note 1)at Tamb = 25 OC
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
Forward Voltage
@ IF=100mA
Peak Reverse Current
BAV19 @ VR=100V
BAV20 @ VR=150V
BAV21 @ VR=200V
Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 1)
Symbol
VRRM
VR
Io
BAV19
120
100
BAV20
200
150
200
BAV21 Units
250 V
200 V
mA
IFSM
Ptot
RθJA
TJ, TSTG
Symbol
VF
IR
Ctot
trr
1000
300
0.35
-65 to + 175
Min
-
-
-
-
Max
1.0
0.1
0.1
0.1
1.5
75
mA
mW
K/mW
OC
Units
V
uA
uA
uA
pF
nS
Note: 1. Reverse Recovery Test Conditions: IF=10mA to IRR=1.0mA VR=6.0V, RL=100Ω
http://www.luguang.cn
mail:[email protected]
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Pages | Pages 2 | ||
Télécharger | [ BAV19 ] |
No | Description détaillée | Fabricant |
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BAV100 | General purpose diodes | NXP Semiconductors |
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