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BAV21WS Datasheet دیتاشیت PDF دانلود

دیتاشیت - Taiwan Semiconductor - 200mW High Voltage SMD Switching Diode

شماره قطعه BAV21WS
شرح مفصل 200mW High Voltage SMD Switching Diode
تولید کننده Taiwan Semiconductor 
آرم Taiwan Semiconductor 


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BAV21WS شرح
Small Signal Product
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
200mW High Voltage SMD Switching Diode
FEATURES
- Surface mount device type
- Moisture sensitivity level 1
- Matte tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.5 ± 0.5 mg
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 μs
Pulse Width = 1 s
VRRM
IF(AV)
IFSM
250
200
2.5
0.5
Junction and Storage Temperature Range
TJ , TSTG
-65 to 150
PARAMETER
SYMBOL
MIN
Breakdown Voltage
(Note 1)
BAV19WS
BAV20WS
BAV21WS
120
VR 200
250
Forward Voltage
IF=100mA
IF=200mA
VF
-
-
Reverse Leakage Current
(Note 2)
BAV19WS
BAV20WS
BAV21WS
IR -
Junction Capacitance
VR=0, f=1.0MHz
CJ
Reverse Recovery Time (Note 3)
trr
Note 1: Test condition : IR= 100μA
Note 2: Test condition : BAV19WS @ VR=100V, BAV20WS @ VR=150V, BAV21WS @ VR=200V
Note 3: Test condition : IF= IR= 30mA , RL=100, Irr=3mA
-
-
MAX
-
-
-
1
1
100
5
50
UNIT
mW
V
mA
A
oC
UNIT
V
V
nA
pF
ns
Document Number: DS_S1501004
Version: D15

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