(PDF) RJS6004WDPK Datasheet - SiC Schottky Barrier Diode

Número de pieza	RJS6004WDPK
Descripción	SiC Schottky Barrier Diode
Fabricantes	Renesas
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No Preview Available ! RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Per leg/device Electrical Characteristics Symbol VRM IF Note1 IFSM Note1 θj-c Tj Tstg Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 10/20 60/120 0.9 150 –55 to +150 (Ta = 25°C) Unit V A A °C/W °C °C Max 1.8 10/20 ⎯ (Ta = 25°C) Unit Test conditions V IF = 10 A μA VR = 600 V ns IF = 10 A, di/dt = 300A/μs R07DS0897EJ0300Rev.3.00 Jan 29, 2014 Page 1 of 3 1 page

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PDF RJS6004WDPK Data sheet ( Hoja de datos )