(PDF) RJS6005WDPK Datasheet - SiC Schottky Barrier Diode

Número de pieza	RJS6005WDPK
Descripción	SiC Schottky Barrier Diode
Fabricantes	Renesas
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No Preview Available ! RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Notes: 1. Per leg/device Symbol VRM IF Note1 IFSM Note1 Tj Tstg Electrical Characteristics Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 15/30 90/180 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C Max 1.8 10/20 ⎯ (Ta = 25°C) Unit Test conditions V IF = 15 A μA VR = 600 V ns IF = 15 A, di/dt = –300A/μs R07DS0901EJ0201Rev.2.01 Jan 31, 2014 Page 1 of 3 1 page

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PDF RJS6005WDPK Data sheet ( Hoja de datos )