|
|
Numéro de référence | RJS6004TDPP-EJ | ||
Description | SiC Schottky Barrier Diode | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
RJS6004TDPP-EJ
600V - 10A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0002ZA-A
(Package name: TO-220FP-2L)
12
Preliminary Datasheet
R07DS0896EJ0300
Rev.3.00
Jan 23, 2014
1
1. Cathode
2. Anode
2
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
Electrical Characteristics
Symbol
VRM
IF
IFSM
Tj
Tstg
Item
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF
IR
trr
Min
⎯
⎯
⎯
Typ
1.5
⎯
15
Ratings
600
10
60
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
°C
°C
(Ta = 25°C)
Max Unit
Test conditions
1.8 V IF = 10 A
10 μA VR = 600 V
⎯ ns IF = 10 A, di/dt = 300 A/μs
R07DS0896EJ0300 Rev.3.00
Jan 23, 2014
Page 1 of 3
|
|||
Pages | Pages 4 | ||
Télécharger | [ RJS6004TDPP-EJ ] |
No | Description détaillée | Fabricant |
RJS6004TDPP-EJ | SiC Schottky Barrier Diode | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |