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Numéro de référence | B772 | ||
Description | PNP Plastic Encapsulated Transistor | ||
Fabricant | SeCoS | ||
Logo | |||
1 Page
Elektronische Bauelemente
B772
-3A , -40V
PNP Plastic Encapsulated Transistor
FEATURES
Low frequency power amplifier
High Current
Low Speed Switching
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF hFE
Product-Rank
B772-R
Range
60~120
B772-O
100~200
B772-Y
160~320
B772-GR
200~400
TO-126
Emitter
Collector
Base
A
E
F
N
L
M
K
B
H
J
C
D
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-40
-30
-6
-3
1.25
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-40
-
-
V IC= -100μA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-30
-
-
V IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE= -100μA, IC=0
Collector Cut – Off Current
ICBO - - -1 μA VCB= -40V, IE=0
Collector Cut – Off Current
ICEO - - -10 μA VCE= -30V, IB=0
Emitter Cut – Off Current
IEBO - - -1 μA VEB= -6V, IC=0
DC Current Gain
hFE 60 - 400
VCE= -2V, IC= -1A
Collector to Emitter Saturation Voltage
VCE(sat)
-
- -0.5 V IC= -2A, IB= -200mA
Base-emitter saturation voltage
VBE(sat)
-
- -1.5 V IC= -2A, IB= -200mA
Transition Frequency
fT
-
80
-
MHz
VCE= -5V, IC= -100mA
f=10MHz
http://www.SeCoSGmbH.com/
12-Sep-2014 Rev.C
Any changes of specification will not be informed individually.
Page 1 of 2
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Pages | Pages 2 | ||
Télécharger | [ B772 ] |
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