|
|
Numéro de référence | BCW68 | ||
Description | PNP General Purpose Transistors | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
TransistIoCrs
PNP General Purpose Transistors
BCW67,BCW68
Features
For general AF applications.
High current gain.
Low collector-emitter saturation voltage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,TS = 79
Junction temperature
Storage temperature
Junction - soldering point
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BCW67 BCW68
-45 -60
-32 -45
-5 -5
-800
-1000
-100
-200
330
150
-65 to +150
215
Unit
V
V
V
mA
mA
mA
mA
mW
K/W
www.kexin.com.cn 1
|
|||
Pages | Pages 2 | ||
Télécharger | [ BCW68 ] |
No | Description détaillée | Fabricant |
BCW60 | NPN general purpose transistors | NXP Semiconductors |
BCW60 | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | Siemens Semiconductor Group |
BCW60 | NPN Silicon AF Transistors | Infineon Technologies AG |
BCW60 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |