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PDF 2SD1781K Data sheet ( Hoja de datos )
| Número de pieza | 2SD1781K | |
| Descripción | Medium Power Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
Medium Power Transistor
2SD1781K
Features
Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA
High current capacity in compact package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms.
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
40
32
5
0.8
1.5
200
150
-55 to +150
Unit
V
V
V
A
mW
Symbol
Testconditons
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
ICBO VCB=20V
IEBO VEB=4V
VCE(sat) IC/IB=500mA/50mA
hFE VCE=3V, IC=100mA
fT VCE=5V, IE= -50mA, f=100MHz
Cob VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking
Rank
hFE
AF
QR
120 270
180 390
1.Base
2.Emitter
3.collector
Min Typ Max Unit
40 V
32 V
5V
0.5 ìA
0.5 ìA
0.1 0.4 V
120 390
150 MHz
15 pF
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