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PDF 2SD1781 Data sheet ( Hoja de datos )

Número de pieza 2SD1781
Descripción NPN Silicon Plastic Encapsulated Transistor
Fabricantes SeCoS 
Logotipo SeCoS Logotipo



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No Preview Available ! 2SD1781 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
2SD1781
0.8A, 40V
NPN Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Very low VCE(sat).VCE(sat) < 0.4 V (Typ.)
(IC /IB = 500mA / 50mA)
Complements to 2SB1197
CLASSIFICATION OF hFE
Product-Rank 2SD1781-Q
Range
120 ~ 270
Marking
AFQ
2SD1781-R
180 ~ 390
AFR
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
Collector


Emitter

Base
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
40
32
5
0.8
200
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
-
-
120
-
-
-
Typ.
-
-
-
-
-
-
-
150
10
Max.
-
-
-
0.5
0.5
390
0.4
-
-
Unit
V
V
V
A
A
V
MHz
pF
Test Conditions
IC = 50A, IE = 0
IC = 1mA, IB = 0
IE = 50A, IC = 0
VCB = 20V, IE = 0
VEB = 4V, IC = 0
IC = 100mA, VCE = 3V
IC = 500mA, IB = 50mA
VCE = 5V, IC = 50mA, f = 100MHz
VCB = 10V, IE = 0, f = 1.0MHz
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
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