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Taiwan Semiconductor - Glass Passivated High Efficient Rectifiers

Numéro de référence HER603G
Description Glass Passivated High Efficient Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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HER603G fiche technique
HER601G thru HER606G
Taiwan Semiconductor
CREAT BY ART
Glass Passivated High Efficient Rectifiers
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: R-6
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.65 g (approximately)
R-6
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
HER HER HER HER HER
SYMBOL
601G 602G 603G 604G 605G
Maximum repetitive peak reverse voltage
VRRM
50 100 200 300 400
Maximum RMS voltage
VRMS
35 70 140 210 280
Maximum DC blocking voltage
VDC 50 100 200 300 400
Maximum average forward rectified current
IF(AV)
6
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
HER
606G
600
420
600
Maximum instantaneous forward voltage (Note 1)
@6A
VF
1.0 1.3 1.7
Maximum reverse current @ rated VR TJ=25
TJ=125
IR
Maximum reverse recovery time (Note 2)
trr
Typical junction capacitance (Note 2)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
RθjA
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
10
200
50
80
37
- 55 to +150
- 55 to +150
75
65
UNIT
V
V
V
A
A
V
μA
ns
pF
OC/W
OC
OC
Document Number: DS_D1408002
Version: F14

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