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Taiwan Semiconductor - High Efficient Rectifiers

Numéro de référence HER105S
Description High Efficient Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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HER105S fiche technique
CREAT BY ART
High Efficient Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
HER101S thru HER108S
Taiwan Semiconductor
MECHANICAL DATA
Case: A-405
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.2g (approximately)
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
HER HER HER HER HER HER
SYMBOL
101S 102S 103S 104S 105S 106S
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
50 100 200 300 400 600
35 70 140 210 280 420
Maximum DC blocking voltage
VDC 50 100 200 300 400 600
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
HER
107S
800
560
800
HER
108S
1000
700
1000
Maximum instantaneous forward voltage (Note 1)
@1A
VF
1.0 1.3 1.7
Maximum reverse current @ rated VR TJ=25
TJ=125
IR
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
RθJA
TJ
TSTG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
150
50
20
100
- 55 to +150
- 55 to +150
75
15
UNIT
V
V
V
A
A
V
μA
ns
pF
OC/W
OC
OC
Document Number: DS_D1404017
Version: F14

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