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PDF VS-150EBU04 Data sheet ( Hoja de datos )
| Número de pieza | VS-150EBU04 | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-150EBU04
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt®
PowerTab®
Cathode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
PowerTab®
150 A
400 V
1.3 V
See recovery table
175 °C
Single die
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
• PowerTab® package
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF(AV)
Single pulse forward current
IFSM
Maximum repetitive forward current
Operating junction and storage
temperatures
IFRM
TJ, TStg
TEST CONDITIONS
TC = 104 °C
TC = 25 °C
Square wave, 20 kHz
MAX.
400
150
1500
300
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 200 μA
IF = 150 A
Forward voltage
VF IF = 150 A, TJ = 175 °C
IF = 150 A, TJ = 125 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 400 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
400
-
-
-
-
-
-
-
TYP.
-
1.07
0.9
0.96
-
-
100
3.5
MAX. UNITS
-
1.3
1.1
1.17
50
4
-
-
V
μA
mA
pF
nH
Revision: 16-Jun-11
1 Document Number: 93003
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-150EBU04
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 16-Jun-11
5 Document Number: 93003
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-150EBU04.PDF ] | |
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