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SeCoS - General Purpose Transistor NPN

Numéro de référence BC847C
Description General Purpose Transistor NPN
Fabricant SeCoS 
Logo SeCoS 





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BC847C fiche technique
Elektronische Bauelemente
BC846A, B
BC847A, B, C
BC848A, B, C
A suffix of "-C" specifies halogen & lead-free
FEATURES
n General Purpose Transistor NPN Type
n Collect current : 0.1A
n Operating Temp. : -55OC ~ +150OC
n RoHS compliant product
C OLLE C TOR
3
1
B AS E
2
E MITTE R
3
1
2
A
L
3
Top View
12
VG
BS
C
D HK
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC846
BC847
BC848
BC846
BC847
BC848
VCBO Ic= 10 ­Aˈ IE=0
VCEO Ic= 10 mAˈ IB=0
80
50
30
65
45
30
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
BC846
BC847
BC848
BC846
BC847
BC848
VEBO
ICBO
ICEO
IE= 10 ­Aˈ IC=0
VCB= 70 V ,
VCB= 50 V ,
VCB= 30 V ,
VCE= 60 V ,
VCE= 45 V ,
VCE= 30 V ,
IE=0
IE=0
IE=0
IB=0
IB=0
IB=0
6
Emitter cut-off current
IEBO VEB= 5 V , IC=0
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC847C,BC848C
HFE˄1˅
VCE= 5V, IC= 2mA
110
200
420
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB= 5 mA
MAX UNIT
V
V
V
0.1 ­A
0.1 ­A
0.1 ­A
220
450
800
0.5 V
Base-emitter saturation voltage
VBE(sat) IC= 100 mA, IB= 5mA
1.1
Transition frequency
VCE= 5 V, IC= 10mA
fT 100
f=100MHz
DEVICE MARKING
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K; BC848C=1L
V
MHz
http://www.SeCoSGmbH.com
01-Jun-2004 Rev.B
Any changing of specification will not be informed individual
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