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Pan Jit International - 30 AMPERES SCHOTTKY BARRIER RECTIFIERS

Numéro de référence MBR3045PT
Description 30 AMPERES SCHOTTKY BARRIER RECTIFIERS
Fabricant Pan Jit International 
Logo Pan Jit International 





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MBR3045PT fiche technique
MBR3020PT~MBR30200PT
30 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 200 Volts CURRENT 30 Amperes
TO-3P
Unit: inch (mm)
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: TO-3P molded plastic
Terminals: solder plated, solderable per MIL-STD-750, Method 2026
Polarity: As marked.
Mounting Position: Any
Weight: 0.2 ounces, 5.6 grams.
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.095(2.4)
.225(5.7)
.204(5.2)
AC
Positive CT
AC
.030(0.75)
.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAM ETER
M axim um R ecurrent P eak R everse Voltage
MBR MBR MBR MBR MBR MBR MBR MBR MBR MBR
SYM BO L
U N ITS
3020PT 3030PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT 30150PT 30200PT
VRRM 20 30 40 45 50 60 80 100 150 200 V
M axim um R M S Voltage
V R M S 14 21 28 31.5 35 42 56 70 105 140 V
M axim um D C B locking Voltage
VDC 20 30 40 45 50 60 80 100 150 200 V
M axim um A verage Forw ard C urrent (S ee fig.1)
IA V
P eak Forw ard S urge C urrent :8.3m s single half sine-
w ave superim posed on rated load(JE D E C m ethod)
IFS M
M axim um Forw ard Voltage at 15A , per leg
VF
M axim um D C R everse C urrent Tc=25 O C
at R ated D C B locking Voltage Tc=125O C
IR
TypicalTherm alR esistance
R θJC
0.65
30
200
0.75 0.8
0.1
20
1.4
A
A
0.92 V
mA
OC /W
O perating Junction Tem perature R ange
TJ
-50 TO + 150
OC
S torage Tem perature R ange
TS TG
-50 TO + 175
OC
Notes :
Both Bonding and Chip structure are available.
STAD-DEC.22.2006
PAGE . 1

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