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PDF BAS85 Data sheet ( Hoja de datos )
| Número de pieza | BAS85 | |
| Descripción | Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAS85 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Small Signal Product
CREAT BY ART
BAS85
Taiwan Semiconductor
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
FEATURES
- Low forward voltage drop
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- Solder hot dip tin (Sn) lead finish
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
VRRM
30
Maximum DC Blocking Voltage
VR 30
Average Forward Rectified Current
IF(AV)
200
Peak Forward Surge Current
IFSM
4
Operating Junction Temperature
TJ 125
Storage Temperature Range
TSTG
-65 to +125
PARAMETER
SYMBOL
Breakdown Voltage
IR=10μA
BV
Reverse Leakage Current
VR=25V
IR
Forward Voltage
IF=0.1mA
IF=1.0mA
IF=10mA
VF
IF=30mA
IF=100mA
Reverse Recovery Time
(Note 1)
trr
Junction Capacitance
VR=1V, f=1.0MHz
CJ
Note 1: Reverse recovery test conditions : IF=IR=10mA, RL=100Ω, IRR=1mA
MIN
30
TYP
5
MAX
2
0.24
0.32
0.40
0.50
0.80
10
UNIT
mW
V
V
mA
A
oC
oC
UNIT
V
μA
V
ns
pF
Document Number: DS_S1412007
Version: C14
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAS85.PDF ] | |
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