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PDF BAS70-04 Data sheet ( Hoja de datos )
| Número de pieza | BAS70-04 | |
| Descripción | Surface Mount Schottky Barrier Diode | |
| Fabricantes | LGE | |
| Logotipo |  |
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Features
Low turn-on voltage
Fast switching
PN junction guard Ring for transient
Mechanical Data
Case: SOT-23, Molded plastic
Weight: 0.008 grams
BAS70/-04/05/06
200mW Surface Mount Schottky Barrier Diode
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
BAS70 Marking: 73
BAS70-04 Marking: 74
BAS70-05 Marking: 75
BAS70-06 Marking: 76
Maximum Ratings TA=25 oC unless otherwise specified
Type Number
Symbol
BAS70
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
V
RMS Reverse Voltage
VR(RMS)
49
V
Forward Continuous Current (Note 1)
IF 70 mA
Non-Repetitive Peak Forward Surge Current
@ t ≦1.0s
IFSM
100 mA
Power Dissipation (Note 1)
Pd 200 mW
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
RθJA
TJ
TSTG
625
-55 to + 125
-65 to + 150
K/W
oC
oC
Type Number
Symbol
Min
Max Units
Reverse Breakdown Voltage (Note 2), IR=10uA
Reverse Leakage Current tp<300us, VR=50V
V(BR)
IR
70
_
100 nA
Forward Voltage Drop
tp=300us, IF=1.0mA
tp<300us, IF=15mA
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 3)
VF
Cj
trr
_
_
_
410
1000
2.0
5.0
mV
pF
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Test Period < 3000uS.
3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω.
http://www.luguang.cn
mail:[email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAS70-04.PDF ] | |
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