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Numéro de référence | BAS16 | ||
Description | SILICON PLANAR SWITCHING DIODE | ||
Fabricant | CDIL | ||
Logo | |||
1 Page
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SWITCHING DIODE
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
12
BAS16
SOT-23
Formed SMD Package
Marking
BAS16 = A6
High-Speed Switching Diodes
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current
(Per Crystal)
t=1µs
t=1ms
t=1s
Power Dissipation @ Ta=25ºC
Storage Temperature Range
Junction Temperature
Thermal Resistance
Junction to Ambient in free fair
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
Tstg
Tj
Rth (j-a)
VALUE
75
85
215
500
4.0
1.0
0.5
0.25
- 55 to +150
150
500
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Forward Voltage
Reverse Voltage Leakage Current
Diode Capacitance
Forward Recovery Voltage When
Switched to
(Ta=25º C unless specified otherwise)
SYMBOL TEST CONDITION
VF IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR VR=25V, Tj=150ºC
VR=75V
VR=75V, Tj=150ºC
Cd VR=0V, f=1MHz
Vfr IF=10mA, tP=20ns
MIN
Reverse Recovery Time When Switched
from
IF=10mA to
trr IR=60mA, RL100 Ω,
measured at IR=1mA
Recovery Charge When Switched from
QS
IF=10mA to VR=5V,
RL=100 Ω,
BAS16 Rev_1 270304E
TYP
MAX
0.715
0.855
1.0
1.25
30
1.0
50
2.0
1.75
4.0
45
UNIT
V
V
mA
mA
A
A
A
W
oC
oC
K/W
UNIT
V
V
V
V
µA
µA
µA
pF
V
ns
pC
Continental Device India Limited
Data Sheet
Page 1 of 3
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Pages | Pages 3 | ||
Télécharger | [ BAS16 ] |
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