|
|
Número de pieza | BC847PN | |
Descripción | Complementary Surface Mount General Purpose Si-Planar Transistors | |
Fabricantes | Diotec | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BC847PN (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! BC847PN
BC847PN
NPN
PNP
Complementary Surface Mount General Purpose Si-Planar Transistors
Komplementäre Si-Planar Transistoren für die Oberflächenmontage
Version 2006-09-05
2±0.1
2 x 0.65
65
4
0.9±0.1
Type
Code
123
2.4
Dimensions - Maße [mm]
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
PNP
300 mW
SOT-363
0.01 g
Maximum ratings (TA = 25°C)
per transistor – pro Transistor
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
VCBO
VCEO
VEB0
Ptot
IC
ICM
IBM
Tj
TS
Grenzwerte (TA = 25°C)
BC847PN
45 V
50 V
6V
300 mW 1)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 2 mA
T1 - NPN
hFE
- VCE = 5 V, - IC = 2 mA
T2 - PNP
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
T1 - NPN
VCEsat
VCEsat
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
T2 - PNP
- VCEsat
- VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
200 – 450
220 – 475
– – 250 mV
– – 600 mV
– – 300 mV
– – 650 mV
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet BC847PN.PDF ] |
Número de pieza | Descripción | Fabricantes |
BC847PN | NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | Siemens Semiconductor Group |
BC847PN | COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Diodes Incorporated |
BC847PN | NPN/PNP Silicon AF Transistor Array | Infineon Technologies AG |
BC847PN | DUAL TRANSISTOR | JCET |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |