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PDF VS-70TPS16PbF Data sheet ( Hoja de datos )

Número de pieza VS-70TPS16PbF
Descripción Thyristor
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-70TPS16PbF Hoja de datos, Descripción, Manual

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 70 A
1
2
3
Super TO-247
2
(A)
1 (K) (G) 3
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Super TO-247
Single SCR
70 A
1200 V, 1600 V
1.25 V
100 mA
-40 °C to 125 °C
FEATURES
• High surge capability
• High voltage input rectification
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• AC switches
• High voltage input rectification (soft start)
• High current crow-bar
• Other phase-control circuits
• Designed to be used with Vishay input diodes, switches,
and output rectifiers which are available in identical
package outlines
DESCRIPTION
The VS-70TPS..PbF high voltage series of silicon controlled
rectifiers are specifically designed for high and medium
power switching, and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
Lead current limitation
Range
100 A, TJ = 25 °C
dI/dt
TJ
VALUES
70
75
1200/1600
1100
1.4
500
150
-40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-70TPS12PbF
VS-70TPS16PbF
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1200
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1300
1700
IRRM/IDRM
AT 125 °C
mA
15
Revision: 15-Apr-14
1 Document Number: 94391
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-70TPS16PbF pdf
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com
Vishay Semiconductors
100
Rectangular gate pulse
a) Recommended load line for
rated diF/dt: 20 V, 30 Ω
tr = 0.5 μs, tp > = 6 μs
b) Recommended load line for
10 < = 30 % rated diF/dt: 20 V, 65 Ω
tr = 1 μs, tp > = 6 μs
(a)
(b)
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
1
0.1
0.001
VGD
IGD
0.01
(4) (3) (2) (1)
Frequency Limited by PG(AV)
0.1 1 10
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
100
1000
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
0.1 D = 0.25
D = 0.17
D = 0.08
Single Pulse
70TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
10
Revision: 15-Apr-14
5 Document Number: 94391
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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