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PDF CGHV31500F Data sheet ( Hoja de datos )
| Número de pieza | CGHV31500F | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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PRELIMINARY
CGHV31500F
500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN:
Package
TCyGpHeV: 43410520107F
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Output Power
665 705 645
Gain
13.2
13.5
13.1
Drain Efficiency
66 68 62
Note:
Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 675 W Typical Output Power
• 13.3 dB Power Gain
• 66% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
1 page  
CGHV31500F-AMP Application Circuit Bill of Materials
Designator
R1
R2
C1
C2, C7, C8
C3
C4, C9
C5
C6
C10
C11
C12
J1,J2
J3
J4
W1
-
Q1
Description
RES, 511, OHM, +/- 1%, 1/16W, 0603
RES, 5.1, OHM, +/- 1%, 1/16W, 0603
CAP, 6.8pF, +/-0.25%, 250V, 0603
CAP, 10.0pF, +/-1%, 250V, 0805
CAP, 10.0pF, +/-5%, 250V, 0603
CAP, 470pF, 5%, 100V, 0603, X
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10uF 16V TANTALUM
CAP, 1.0uF, 100V, 10%, X7R, 1210
CAP, 33uF, 20%, G CASE
CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC
CONN, SMA, PANEL MOUNT JACK, FL
HEADER, RT>PLZ, 0.1CEN LK 9POS
CONNECTOR; SMB, Straight, JACK, SMD
CABLE, 18 AWG, 4.2
PCB, RO4350, 2.5 X 4.0 X 0.030
CGHV31500F
Qty
1
1
1
3
1
2
1
1
1
1
1
2
1
1
1
1
1
CGHV31500F Power Dissipation De-rating Curve
CGHV31500F Transient Power Dissipation De-Rating Curve
400
350
300
Note 1
250
200
150
100
500 us 10 %
50
100 us 10 %
0
0
Maximum Case Temperature (°C)
25 50 75 100 125 150 175 200 225
Note 1. Area exceeds MaximMuamxiCmausme TCeamsepeTreamtupreer(aStueereP(a°Cge) 2).
250
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CGHV31500F.PDF ] | |
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