|
|
PDF CGHV27060MP Data sheet ( Hoja de datos )
| Número de pieza | CGHV27060MP | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CGHV27060MP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PRELIMINARY
CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor
(HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a
broadband device with no internal input or output match which allows for the agility
to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP
makes for an excellent transistor for pulsed applications at UHF, L Band or low S
Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation
amplifiers in the power class of 10 to 15W average power in high efficiency topologies
such as Class A/B, F or Doherty amplifiers.
PN: CGHV27060MP
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 41.5 dBm Avg POUT
18.25
18.5
18.25
ACLR @ 41.5 dBm Avg POUT
-34 -37 -38
Drain Efficiency @ 41.5 dBm Avg POUT
33
35
33
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 125 mA.
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain
16.5
16.3
16.2
Output Power
84 82 79
Drain Efficiency
71 69 65
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, PIN = 33 dBm.
Units
dB
dBc
%
Units
dB
W
%
Features - WCDMA
• 2.5 - 2.7 GHz Reference Design Amplifier
• 18.5 dB Gain at 14 W PAVE
• -35 dBc ACLR at 14 W PAVE
• 35% Efficiency at 14 W PAVE
• High Degree of DPD Correction Can be Applied
Features - Pulsed
• 16.5 dB Gain at Pulsed PSAT
• 70% Efficiency at Pulsed PSAT
• 80W at Pulsed PSAT
Subject to change without notice.
www.cree.com/rf
1
1 page  
Product Dimensions CGHV27060MP (20-Lead Package)
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV27060MP Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CGHV27060MP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CGHV27060MP | GaN HEMT | Cree |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |