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PDF CGHV1F025S Data sheet ( Hoja de datos )
| Número de pieza | CGHV1F025S | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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CGHV1F025S
25 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities. The device can be deployed for L, S, C, X and
Ku-Band amplifier applications. The datasheet specifications are based on a
X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail
circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN)
package. Under reduced power, the transistor can operate below 40V to as low
as 20V VDD, maintaining high gain and efficiency.
PackagPeN:TyCpGeH:V31xF40D25FSN
Typical Performance 8.9 - 9.6 GHz (TC = 25˚C) , 40 V
Parameter
8.9 GHz
9.2 GHz
9.4 GHz
Output Power @ PIN = 37 dBm 24 29 27
Drain Efficiency @ PIN = 37 dBm
43.5
48.5
48
Gain @ PIN = 0 dBm
10.7
11.6
11.3
Note:
Measured in the CGHV1F025S-TB1 application circuit. Pulsed 100 µs 10% duty.
9.6 GHz
25
46
11.1
Units
W
%
dB
Features
• Up to 15 GHz Operation
• 25 W Typical Output Power
• 11 dB Gain at 9.4 GHz
• Application circuit for 8.9 - 9.6 GHz
Subject to change without notice.
www.cree.com/rf
1
1 page  
CGHV1F025S-TB1 Application Circuit
Bill of Materials
Designator
R1
R2
C1, C2
C3, C4
C9, C10
C5, C11
C6, C12
C7, C13
C14
C8
C15
J1, J2
J3
Q1
W1
Description
RES, 100, OHM, +1/-1%, 1/16 W, 0603
RES, 10, OHM, +1/-1%, 1/16 W, 0603
CAP, 1pF, ±0.1 pF, 0603, ATC
CAP, 1.8pF, ±0.1 pF, 0603, ATC
CAP, 0.6pF, ±0.1 pF, 0603, ATC
CAP, 10 pF, ±5%, 0603, ATC
CAP, 470 pF, 5%, 100 V, 0603, X
CAP, 33000 pF, 0805, 100V, X7R
CAP, 1.0 UF, 100V, 10%, X7R, 1210
CAP, 10 UF, 16V TANTALUM
CAP, 33UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE
HEADER RT>PLZ .1CEN LK 5POS
QFN TRANSISTOR CGHV1F025S
CABLE, 18 AWG, 4.2
Rogers 5880 PCB 10 mils
Qty
1
1
2
2
2
1
2
2
1
1
1
2
1
1
1
1
CGHV1F025S-TB1 Application Circuit
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
2 (125 V to 250 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
5 CGHV1F025S Rev 0.2 - Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet CGHV1F025S.PDF ] | |
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