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PDF CGHV14500 Data sheet ( Hoja de datos )
| Número de pieza | CGHV14500 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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CGHV14500
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could
be utilized for band specific applications ranging from 800 through 1600 MHz. The package
options are ceramic/metal flange and pill package.
Package Type:P4N4:0C1G17H,V41440510303
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
545 540 530 530
1.4 GHz
530
Gain
16.4
16.3
16.2
16.2
16.2
Drain Efficiency
69 69 68 66 65
Note:
Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, PIN = 41 dBm.
Units
W
dB
%
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• FET tuning range UHF through 1800 MHz
• 530 W Typical Output Power
• 16 dB Power Gain
• 68% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
• Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
1
1 page  
Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
Z Source
Z Load
900
1000
1100
1200
1300
1400
1500
0.3 - j0.3
0.3 - j0.4
0.6 - j0.4
0.8 - j0.7
1.1 - j0.7
1.2 - j0.1
1.8 - j0.1
2.1 + j1.4
2.0 +j0.7
1.8 + j0.9
1.5 + j0.9
1.3 + j0.7
1.2 + j0.5
1.1 + j0.4
Note 1. VDD = 50 V, IDQ = 500 mA in the 440117 package
Note 2. Optimized for power gain, PSAT and Drain Efficiency
Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier
stability
CGHV14500 Power Dissipation De-rating Curve
Figure 5. - CGHV145C0G0HVT14ra50n0sTireannstiePntoPwoweerrDDissssipipataiotnioDne-RDaetin-gRCautrivneg Curve
400
350
Pill - 500 µs 10%
300
250
200
Flange - CW
150
Flange - 500 us 10 %
100 Pill - 500 us 10 %
Flange - CW
Pill - CW
50
Note 1
0
0 25 50 75 100 125 150 175 200 225
Maximum Case Temperature ( C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
250
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV14500 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2014 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGHV14500 Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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| PDF Descargar | [ Datasheet CGHV14500.PDF ] | |
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