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PDF CGH55030F1 Data sheet ( Hoja de datos )
| Número de pieza | CGH55030F1 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
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CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX
and BWA amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
Small Signal Gain
9.5 10.0
5.80 GHz
9.5
Units
dB
EVM at PAVE = 29 dBm
1.1 0.9 0.9 %
EVM at PAVE = 36 dBm
2.2 1.4 1.4 %
Drain Efficiency at PAVE = 4 W
23
24
25 %
Input Return Loss
10.8
22
9.3 dB
Note:
Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 300 MHz Instantaneous Bandwidth
• 30 W Peak Power Capability
• 10 dB Small Signal Gain
• 4 W PAVE < 2.0 % EVM
• 25 % Efficiency at 4 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/rf
1
1 page  
Typical DOCSIS Performance
Modulation Error Ratio vs Output Power of
CGH55030F1 andCGCHG55H0350 E5V0M3v0s PPo1weinr OButrpouta-dDbOCaSnISd Amplifier Circuit
42
40
38
36
34
5.50 GHz
32 5.65 GHz
5.80 GHz
30
15 20 25 30 35 40
Power Output (dBm)
Note:
MER is the metric of choice for cable systems and can be related to EVM by the following
equation: EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average
constellation power ratio” which varies with the modulation type: MTA = 0 for BPSK and QPSK; 2.55 for 16QAM
and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS
EVM vs Output Power of CGH55030F1 and CGH55030P1 in Broadband Amplifier Circuit
CGH55030 EVM vs Power Output - DOCSIS
1.4
5.50 GHz
1.2 5.65 GHz
5.80 GHz
1.0
0.8
0.6
0.4
0.2
0.0
15 20 25 30 35
Power Output (dBm)
Note:
Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB.
40
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Product Dimensions CGH55030F1 (Package Type — 440166)
Product Dimensions CGH55030P1 (Package Type — 440196)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet CGH55030F1.PDF ] | |
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