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CGH35240F fiches techniques PDF

Cree - GaN HEMT

Numéro de référence CGH35240F
Description GaN HEMT
Fabricant Cree 
Logo Cree 





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CGH35240F fiche technique
CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
Output Power
250 240 225 225
3.5 GHz
220
Gain
12.1
11.9
11.6
11.5
11.4
Power Added Efficiency
60
59
57
52
Note:
Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
48
Units
W
dB
%
Features
• 3.1 - 3.5 GHz Operation
• 240 W Typical Output Power
• 11.6 dB Power Gain at PIN = 42.0 dBm
• 57 % Typical Power Added Efficiency
• 50 Ohm Internally Matched
• <0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/wireless
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