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CGH35060F1 fiches techniques PDF

Cree - GaN HEMT

Numéro de référence CGH35060F1
Description GaN HEMT
Fabricant Cree 
Logo Cree 





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CGH35060F1 fiche technique
CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and
BWA linear amplifier applications. The transistor is supplied in a ceramic/
metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable,
enabling even greater efficiency when used with digital pre-distortion (DPD).
PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916
Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
Small Signal Gain
11.7
12.2
12.6
3.6 GHz
12.8
EVM @ 26 dBm
2.05
1.82
1.56
1.80
EVM @ 39 dBm
1.91
1.83
1.98
2.86
Drain Efficiency @ 39 dBm
22.0
23.1
24.9
26.7
Input Return Loss
8.0
10.3
12.5
13.1
Note:
Measured in the CGH35060F1-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 3.3 - 3.6 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 8.0 W PAVE at < 2.0 % EVM
• 25 % Drain Efficiency at 8 W PAVE
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
1

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