DataSheetWiki


CGH31240F fiches techniques PDF

Cree - GaN HEMT

Numéro de référence CGH31240F
Description GaN HEMT
Fabricant Cree 
Logo Cree 





1 Page

No Preview Available !





CGH31240F fiche technique
CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
Output Power
243 249 249 245
3.1 GHz
243
Gain
11.9
11.9
11.9
11.9
11.9
Power Added Efficiency
60
61
60
59
52
Note:
Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60 % Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1

PagesPages 12
Télécharger [ CGH31240F ]


Fiche technique recommandé

No Description détaillée Fabricant
CGH31240F GaN HEMT Cree
Cree

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche