|
|
Numéro de référence | CGH31240F | ||
Description | GaN HEMT | ||
Fabricant | Cree | ||
Logo | |||
1 Page
CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
Output Power
243 249 249 245
3.1 GHz
243
Gain
11.9
11.9
11.9
11.9
11.9
Power Added Efficiency
60
61
60
59
52
Note:
Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60 % Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
|
|||
Pages | Pages 12 | ||
Télécharger | [ CGH31240F ] |
No | Description détaillée | Fabricant |
CGH31240F | GaN HEMT | Cree |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |