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PDF CFG40006S Data sheet ( Hoja de datos )
| Número de pieza | CFG40006S | |
| Descripción | RF Power GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CFG40006S (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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CGH40006S
6 W, RF Power GaN HEMT, Plastic
Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S
ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm
x 3mm, surface mount, quad-flat-no-lead (QFN) package.
PackaPgNe’sT:yCpeGsH: 4404000260S3
FEATURES
• Up to 6 GHz Operation
• 13 dB Small Signal Gain at 2.0 GHz
• 11 dB Small Signal Gain at 6.0 GHz
• 8 W typical at PIN = 32 dBm
• 65 % Efficiency at PIN = 32 dBm
• 28 V Operation
• 3mm x 3mm Package
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
1
1 page  
Typical Performance
Power Gain vs Input Power as a Function of Frequency
of the CGH40006S in the CGH40006S-AMP1
VDDG=a2in8vVs, iInDQpu=t1p0o0wmerA
14
12
10
8
6
2.0 GHz
4 3.0 GHz
4.0 GHz
2 5.0 GHz
6.0 GHz
0
10 12 14 16 18 20 22 24 26 28 30 32 34
Input Power (dBm)
Drain Efficiency vs Input Power as a Function of Frequency
of the CGH40006S in the CGH40006S-AMP1
VDDD=ra2in8EVff,icIiDeQnc=y1v0s.0Pmin A
100%
90%
80%
70%
2.0 GHz
3.0 GHz
4.0 GHz
5.0 GHz
6.0 GHz
60%
50%
40%
30%
20%
10%
0%
10 12 14 16 18 20 22 24 26 28 30 32
Input Power (dBm)
34
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGH40006S Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic
CGH40006S-AMP1 Demonstration Amplifier Circuit Outline
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGH40006S Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet CFG40006S.PDF ] | |
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