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PDF INJ0212AP1 Data sheet ( Hoja de datos )
| Número de pieza | INJ0212AP1 | |
| Descripción | Silicon P-channel MOSFET | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
4.4
1.6
UNIT：mm
1.5
FEATURE
SDG
MARKING
・Input impedance is high, and not necessary to
consider a drive electric current.
・High drain current ID=-2.5A
・Vth is low, and drive by low voltage is possible. Vth=1.0～2.5V
・Low on Resistance. RDS(on)=95mΩ(TYP).
・High speed switching.
APPLICATION
0.5
1.5
3.0
0.4
0.4
TERMINAL CONNECTOR
S：SOURCE
D：DRAIN
G：GATE
JEITA：SC-62
JEDEC：SOT-89
Switching
MAXIMUM RATING （Ta=25℃）
Symbol
Parameter
Rating
UNIT
VDSS Drain-Source Voltage
-30 V
VGSS
ID(DC)
Gate-Source Voltage
Drain Current (DC)
±20
-2.5
V
A
IDP Drain Current(Pulse) ※1
-5 A
PD Total Power Dissipation
750(※2)
mW
Tch Channel Temperature
150 ℃
Tstg Storage Temperature
-55～+150
℃
※1：PW≦10µs, Duty cycle≦1%
※2：package mounted on 9mm×19mm×1mm glass-epoxy substrate
EQUIVALENT
D
G
S
MARKING
Type Name
JJ
Lot No．
ELECTRICAL CHARACTERISTICS （Ta=25℃）
Parameter
Symbol
Test Condition
Drain-Source Breakdown Voltage
Gate-Source Leak Current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Coss
ton
toff
ID=-100µA，VGS=0V
VGS=±20V，ID=0A
VDS=-30V，VGS=0V
ID=-250µA，VDS=VGS
VDS=-10V，ID=-1.2A
ID=-0.5A，VGS=-4.5V
ID=-0.5A，VGS=-10V
VDS=-10V，VGS=0V，f=1MHz
VDD=-10V，ID=-2.5A，VGS=-0～-5V
Limit
Unit
MIN TYP MAX
-30 -
-V
-
-
±10
µA
- - -1 µA
-1 - -2.5 V
- 3.0 - S
- 120 -
mΩ
- 95 -
- 500 -
pF
- 100 -
- 35 -
ns
- 50 -
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet INJ0212AP1.PDF ] | |
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