|
|
Número de pieza | XD1002-BD | |
Descripción | Distributed Amplifier | |
Fabricantes | Mimix Broadband | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de XD1002-BD (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! 0.05-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 18-Jan-10
Features
Wide Band Driver Amplifier
9.0 dB Small Signal Gain
5.0 dB Noise Figure
15.0 dB Gain Control
+9.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
D1002-BD
Chip Device Layout
General Description
Mimix Broadband’s 0.05-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 9.0 dB
with a noise figure of 5.0 dB across the band.The
device also includes 15.0 dB gain control and a +9.0
dBm P1dB compression point.This MMIC uses Mimix
Broadband’s GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for microwave,
millimeter-wave and wideband military applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+10.0 VDC
Supply Current (Id)
150 mA
Gate Bias Voltage (Vg1)
+0.3 VDC
Gate Bias Voltage (Vg2)
+3.0 VDC
Input Power (Pin)
+18 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)1 +175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)1
Drain Bias Voltage (Vd)
Gain Control Bias (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=8.5V, Vg1=0.0V, Vg2=1.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
VDC
VDC
VDC
mA
Min.
0.05
-
-
-
-
-
-
-
-
-
-2.0
-
-
Typ.
-
14.0
14.0
9.0
+/-1.5
15.0
40.0
5.0
+9.0
+8.5
0.0
+1.0
120
Max.
50.0
-
-
-
-
-
-
-
-
+9.0
+0.1
-
140
(1) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page 0.05-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 18-Jan-10
D1002-BD
App Note [1] Biasing - As shown in the bonding diagram, this
device is operated with a single drain and gate voltage and it also
includes a separate gain control voltage. Maximum gain bias is
nominally Vd=8.5V, Vg1=0.0V, Vg2=1.0V, and Id=120mA. Gain can be
adjusted by changing Vg1. It is recommended to use active biasing
to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the
supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational
amplifier, with a low value resistor in series with the drain supply
used to sense the current.The gate of the pHEMT is controlled to
maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this is 0.0V.Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to
ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg1,2) need to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet XD1002-BD.PDF ] |
Número de pieza | Descripción | Fabricantes |
XD1002-BD | Distributed Amplifier | Mimix Broadband |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |