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Vishay - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Numéro de référence V40100C-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Fabricant Vishay 
Logo Vishay 





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V40100C-E3 fiche technique
V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V40100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF40100C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB40100C
PIN 1
K
PIN 2
HEATSINK
VI40100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
100 V
250 A
0.61 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Dual Common Cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH
per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IFSM
EAS
IRRM
dV/dt
TJ, TSTG
V40100C VF40100C VB40100C VI40100C
100
40
20
250
230
1.0
10 000
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
°C
Revision: 14-Nov-14
1 Document Number: 89042
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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