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Fairchild Semiconductor - Dual N-Channel PowerTrench MOSFET

Numéro de référence FDMS7700S
Description Dual N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS7700S fiche technique
May 2014
FDMS7700S
Dual N-Channel PowerTrench® MOSFET
N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
Q2: N-Channel
„ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 20 A
„ Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 18 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual MLP package.The switch node has been internally
connected to enable easy placement and routing of synchronous
buck converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCORE
S2
S2 S2
G2
S1/D2
D1
D1
D1
D1 G1
Top Bottom
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
S2 5
S2 6
S2 7
G2 8
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 3)
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Thermal Characteristics
Q2 4 D1
3 D1
2 D1
Q1 1 G1
Q1 Q2
30 30
±20 ±20
30
121a
40
221b
40
2.21a
1.01c
60
2.51b
1.01d
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
571a
1251c
3.5
501b
1201d
2
°C/W
Device Marking
FDMS7700S
Device
FDMS7700S
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7700S Rev.C1
1
www.fairchildsemi.com

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