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Numéro de référence | KTC4374 | ||
Description | NPN Transistor | ||
Fabricant | WEJ | ||
Logo | |||
1 Page
RoHS
KTC4374
KTC4374 TRANSISTOR (NPN)
DFEATURES
Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 400
Collector-base voltage
mA
OV(BR)CBO:
80 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage
RCollector cut-off current
TEmitter cut-off current
CDC current gain
ECollector-emitter saturation voltage
LBase-emitter voltage
ETransition frequency
JCollector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=1mA, IE=0
Ic=10mA, IB=0
IE=1mA, IC=0
VCB=80V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=200mA, IB=20mA
VCE=2V, IC=5mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
80 V
80 V
5V
0.1 µA
0.1 µA
70 240
50
0.4 V
0.8 V
100 MHz
10 pF
ECLASSIFICATION OF hFE(1)
WRank
O
Y
Range
70-140
120-240
Marking
EO
EY
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Pages | Pages 1 | ||
Télécharger | [ KTC4374 ] |
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