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PDF KTC4076 Data sheet ( Hoja de datos )
| Número de pieza | KTC4076 | |
| Descripción | NPN Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
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KTC4076
TRANSISTOR (NPN)
FEATURES
Excellent hFE Linearity
Complementary to KTA2015
SOT–323
APPLICATIONS
General Purpose Switching
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
35
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
5
IC Collector Current
500
PC Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj Junction Temperature
Tstg Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCB=6V,IC=20mA ,
VCB=6V, IE=0, f=1MHz
Min Typ
35
30
5
70
25
300
7
CLASSIFICATION OF hFE(1), hFE(2)
RANK
O
RANG hFE(1)
70–140
hFE(2)
25Min
MARKING
WO
Y
120–240
40Min
WY
Max
0.1
0.1
240
0.25
1
Unit
V
V
V
µA
µA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com
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