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Numéro de référence | KTA1666 | ||
Description | PNP Transistor | ||
Fabricant | Jin Yu Semiconductor | ||
Logo | |||
1 Page
TRANSISTOR (PNP)
FEATURES
z Complementary to KTC4379
z Small Flat Package
z Low Saturation Voltage
z Power Amplifier and Switching Application
KTA1666
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= -1mA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO VEB=-5V,IC=0
-100
nA
DC current gain
hFE(1)*
hFE(2)*
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1.5A
70
40
240
Collector-emitter saturation voltage
VCE(sat)* IC=-1A,IB=-50mA
-0.5 V
Base-emitter saturation voltage
VBE(sat)* IC=-1A,IB=-50mA
-1.2 V
Collector output capacitance
Cob VCB=-10V,IE=0, f=1MHz
40 pF
Transition frequency
fT VCE=-2V,IC= -500mA
120 MHz
*Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70–140
Y
120–240
MARKING
WO
WY
JinYu
semiconductor
www.htsemi.com
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Pages | Pages 1 | ||
Télécharger | [ KTA1666 ] |
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