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ACE2302M fiches techniques PDF

ACE Technology - N-Channel MOSFET

Numéro de référence ACE2302M
Description N-Channel MOSFET
Fabricant ACE Technology 
Logo ACE Technology 





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ACE2302M fiche technique
ACE2302M
N-Channel 20-V MOSFET
Description
ACE2302M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulse Drain Current b
TA=25
TA=70
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating Temperature / Storage Temperature
*1 Pw 10 μs, Duty cycle 1 %
*2 When mounted on a 1*0.75*0.062 inch glass epoxy board%
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ/TSTG
Limit
20
±8
3.4
2.7
10
1.6
1.3
0.8
-55/150
Units
V
V
A
A
A
W
OC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
100
166
Units
OC/W
VER 1.1 1

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