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ACE Technology - P-Channel MOSFET

Numéro de référence ACE1421M
Description P-Channel MOSFET
Fabricant ACE Technology 
Logo ACE Technology 





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ACE1421M fiche technique
ACE1421M
P-Channel 20-V MOSFET
Description
The ACE1421M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
Load Switches
DC/DC Conversion
Motor Drives
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25
TA=70
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25
TA=70
Operating temperature / storage temperature
Symbol Limit Units
VDS -20 V
VGS ±8 V
-8.8
ID
A
-7
IDM -40 A
IS -5 A
3
PD
W
1.9
TJ/TSTG -55~150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
40
90
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1

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