|
|
Numéro de référence | ACE1421M | ||
Description | P-Channel MOSFET | ||
Fabricant | ACE Technology | ||
Logo | |||
ACE1421M
P-Channel 20-V MOSFET
Description
The ACE1421M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to
allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Applications
• Load Switches
• DC/DC Conversion
• Motor Drives
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25℃
TA=70℃
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS -20 V
VGS ±8 V
-8.8
ID
A
-7
IDM -40 A
IS -5 A
3
PD
W
1.9
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec
Steady State
RθJA
Maximum
40
90
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
|
|||
Pages | Pages 7 | ||
Télécharger | [ ACE1421M ] |
No | Description détaillée | Fabricant |
ACE1421M | P-Channel MOSFET | ACE Technology |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |