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PDF GBJ1510 Data sheet ( Hoja de datos )

Número de pieza GBJ1510
Descripción 15.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! GBJ1510 Hoja de datos, Descripción, Manual

GBJ15005 thru GBJ1510
®
Pb Free Plating Product
GBJ15005 thru GBJ1510
Pb
15.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 240 A peak
Ideal for printed circuit board
Mechanical Data
Case: Molded plastic,GBJ(5S/6KBJ)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per JESD22-B102,
Meet JESD 201 class 2 whisker test
Mounting position: Any
GBJ
Dimensions in inches and (millimeters)
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
+
~~-
.119
(0.5) .800(20.3)
.697(17.7) .441(11.2)
.425(10.8)
.114(2.9)
.165(4.2) .708(18.0) .098(2.5)
.150(3.8) .669(17.0)
.402(1.1)
.386(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL GBJ15005 GBJ1501 GBJ1502 GBJ1504 GBJ1506 GBJ1508 GBJ1510 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 7.5 A
@ 15 A
Maximum reverse current @ rated VR
Typical thermal resistance
TJ=25°C
TJ=125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
VF
IR
RθJC
TJ
TSTG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
15 A
240 A
239 A2s
1.0
1.1
10
500
0.8
- 55 to +150
- 55 to +150
V
μA
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/

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