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Numéro de référence | HFP8N60U | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
HFP8N60U
600V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
August 2012
BVDSS = 600 V
RDS(on) typ ȍ
ID = 7.5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
7.5
4.7
30.0
ρ30
280
7.5
15.0
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
150
1.2
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.82
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͲΦΘΦΤΥ͑ͣͣ͑͢͡
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Pages | Pages 8 | ||
Télécharger | [ HFP8N60U ] |
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