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SemiHow - N-Channel MOSFET

Numéro de référence HFP10N65U
Description N-Channel MOSFET
Fabricant SemiHow 
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HFP10N65U fiche technique
HFP10N65U
650V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 29 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.8 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
March 2013
BVDSS = 650 V
RDS(on) typ = 0.8 ȍ
ID = 9.5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
9.5
6.0
38
ρ30
470
9.5
16.4
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
164
1.32
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.76
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͤ͑͢͡

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