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Numéro de référence | HFU8N70U | ||
Description | N-Channel MOSFET | ||
Fabricant | SemiHow | ||
Logo | |||
HFD8N70U / HFU8N70U
700V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.3 ȍ7\S#9GS=10V
100% Avalanche Tested
June 2015
BVDSS = 700 V
RDS(on) typ = 1.3 ȍ
ID = 6.0 A
D-PAK I-PAK
2
1
3
HFD8N70U
1
2
3
HFU8N70U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
6.0
3.8
24
ρ30
280
6.0
9.8
4.5
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.5
98
0.78
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.28
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͦ͝ͻΦΟΖ͑ͣͦ͑͢͡
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Pages | Pages 8 | ||
Télécharger | [ HFU8N70U ] |
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