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PDF DMN3067LW Data sheet ( Hoja de datos )

Número de pieza DMN3067LW
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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No Preview Available ! DMN3067LW Hoja de datos, Descripción, Manual

Product Summary
V(BR)DSS
30V
RDS(ON)
67m@ VGS = 4.5V
70m@ VGS = 4.0V
98m@ VGS = 2.5V
ID
TA = +25°C
2.6A
2.5A
2.2A
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Switching
Power Management Functions
SOT323
DMN3067LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
D
ESD PROTECTED
Top View
GS
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN3067LW-7
DMN3067LW-13
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Date Code Key
Year
Code
2011
Y
Month
Code
Jan Feb
12
DMN3067LW
Document number: DS36640 Rev. 4 - 2
Shanghai A/T Site
N30 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated

1 page




DMN3067LW pdf
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
DMN3067LW
A
BC
G
H
K
JD
L
M
SOT323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D-
- 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 0.95
L 0.25 0.40 0.30
M 0.10 0.18 0.11
 0° 8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
2.8
0.7
0.9
1.9
1.0
DMN3067LW
Document number: DS36640 Rev. 4 - 2
5 of 6
www.diodes.com
March 2014
© Diodes Incorporated

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