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GeneSiC - Silicon Super Fast Recovery Diode

Numéro de référence UFT10040
Description Silicon Super Fast Recovery Diode
Fabricant GeneSiC 
Logo GeneSiC 





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UFT10040 fiche technique
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 600 V VRRM
• Non Isolated to plate
• Not ESD Sensitive
UFT10005 thru UFT10060
VRRM = 50 V - 600 V
IF(AV) = 100 A
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
50 100 200 400 600
35
50
-55 to 150
-55 to 150
70
100
-55 to 150
-55 to 150
140
200
-55 to 150
-55 to 150
280
400
-55 to 150
-55 to 150
420
600
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
UFT10005 UFT10010 UFT10020 UFT10040 UFT10060 Unit
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at
rated DC blocking voltage (per
leg)
Maximum reverse recovery time
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
IF(AV)
IFSM
VF
IR
Trr
RΘJC
TC 125 °C
tp = 8.3 ms, half sine
IF = 50 A, Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
100
1000
1.0
25
3
60
1.0
100
1000
1.0
25
3
60
1.0
100
1000
1.0
25
3
60
1.0
100
1000
1.3
25
3
70
1.0
100
1000
1.7
25
3
90
A
A
V
μA
mA
ns
1.0 °C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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