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Motorola Semiconductors - NPN SILICON POWER DARLINGTON TRANSISTOR

Numéro de référence 2N6576
Description NPN SILICON POWER DARLINGTON TRANSISTOR
Fabricant Motorola Semiconductors 
Logo Motorola Semiconductors 





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2N6576 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Power Darlington
Transistors
General–purpose EpiBase power Darlington transistors, suitable for linear and
switching applications.
Replacement for 2N3055 and Driver
High Gain Darlington Performance
Built–in Diode Protection for Reverse Polarity Protection
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCan Be Driven from Low–Level Logic
Popular Voltage Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating Range — –65 to +200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N6576 2N6577 2N6578 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
VCEO(sus)
VCB
VEB
IC
60
60
90 120 Vdc
90 120 Vdc
7.0 Vdc
15 Adc
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak
IB
0.25 Adc
0.50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current— Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
IE
15.25
30.5
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
PD
120 Watts
0.685
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 200
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/16from Case for 10s.
Symbol
RθJC
TL
Max Unit
1.46 _C/W
265 _C
(1) Indicates JEDEC Registered Data.
DARLINGTON SCHEMATIC
COLLECTOR
Order this document
by 2N6576/D
2N6576
2N6577
2N6578
15 AMPERE
POWER TRANSISTORS
NPN SILICON
DARLINGTON
60, 90, 120 VOLTS
120 WATTS
CASE 1–07
TO–204AA
(TO–3)
BASE
[ [4 k 50
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
EMITTER
1

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