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Numéro de référence | 2N6576 | ||
Description | NPN SILICON POWER DARLINGTON TRANSISTOR | ||
Fabricant | Motorola Semiconductors | ||
Logo | |||
1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Power Darlington
Transistors
General–purpose EpiBase power Darlington transistors, suitable for linear and
switching applications.
• Replacement for 2N3055 and Driver
• High Gain Darlington Performance
• Built–in Diode Protection for Reverse Polarity Protection
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Can Be Driven from Low–Level Logic
• Popular Voltage Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Operating Range — –65 to +200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N6576 2N6577 2N6578 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
VCEO(sus)
VCB
VEB
IC
60
60
90 120 Vdc
90 120 Vdc
7.0 Vdc
15 Adc
30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak
IB
0.25 Adc
0.50
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current— Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak
IE
15.25
30.5
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
PD
120 Watts
0.685
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 200
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/16″ from Case for 10s.
Symbol
RθJC
TL
Max Unit
1.46 _C/W
265 _C
(1) Indicates JEDEC Registered Data.
DARLINGTON SCHEMATIC
COLLECTOR
Order this document
by 2N6576/D
2N6576
2N6577
2N6578
15 AMPERE
POWER TRANSISTORS
NPN SILICON
DARLINGTON
60, 90, 120 VOLTS
120 WATTS
CASE 1–07
TO–204AA
(TO–3)
BASE
[ [4 k 50
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
EMITTER
1
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Pages | Pages 4 | ||
Télécharger | [ 2N6576 ] |
No | Description détaillée | Fabricant |
2N657 | BJT | New Jersey Semiconductor |
2N6573 | Nipolar NPN Device | Semelab Plc |
2N6573 | (2N6573 - 2N6576) NPN Silicon Transistor | Micro Electronics |
2N6574 | (2N6573 - 2N6576) NPN Silicon Transistor | Micro Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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