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PDF 2N6301 Data sheet ( Hoja de datos )
| Número de pieza | 2N6301 | |
| Descripción | PNP DARLINGTON POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6301 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/539
Devices
2N6300
2N6301
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 00C (1)
@ TC = 1000C
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Junction Temperature Range TJ, Tstg
1) Derate linearly 0.428 W/0C above TC > 00C
2N6300 2N6301
60 80
60 80
5.0
120
8.0
75
32
-55 to +200
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N6300
2N6301
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 30 Vdc
2N6300
ICEO
VCE = 40 Vdc
Collector-Emitter Cutoff Current
2N6301
VCE = 60 Vdc, VBE = -1.5 Vdc
2N6300
ICEX
VCE = 80 Vdc, VBE = -1.5 Vdc
Emitter-Base Cutoff Current
2N6301
VEB = 5.0 Vdc
IEBO
Units
Vdc
Vdc
Vdc
mAdc
Adc
W
W
0C
Min.
60
80
TO-66* (TO-213AA)
*See appendix A for
package outline
Max.
Unit
Vdc
0.5 mAdc
0.5
0.5 mAdc
0.5
2.0 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6301.PDF ] | |
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