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PDF DMG6602SVTQ Data sheet ( Hoja de datos )

Número de pieza DMG6602SVTQ
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMG6602SVTQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V(BR)DSS
Q1 30V
Q2 -30V
RDS(on)
60mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
95mΩ @ VGS = -10V
140mΩ @ VGS = -4.5V
ID
TA = +25°C
3.4A
2.7A
-2.8A
-2.3A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Backlighting
DC-DC Converters
Power Management Functions
TSOT26
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
Q1
D1
Q2
D2
G1 1
S2 2
6 D1
5 S1
G1
G2
Top View
G2 3
4 D2
Top View
S1
N-Channel
S2
P-Channel
Ordering Information (Note 5)
Notes:
Part Number
DMG6602SVTQ-7
DMG6602SVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
66C
66C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2010
X
2011
Y
Month
Code
Jan Feb
12
DMG6602SVTQ
Document number: DS37643 Rev. 1 - 2
2012
Z
Mar
3
2013
A
Apr
4
2014
B
2015
C
2016
D
2017
E
May
5
Jun
6
Jul Aug Sep
78
9
1 of 10
www.diodes.com
2018
F
Oct
O
2019
G
2020
H
Nov Dec
ND
December 2014
© Diodes Incorporated

1 page




DMG6602SVTQ pdf
1000
100
COSS Ave (pF)
f = 1MHz
CISS Ave (pF)
CRSS Ave (pF)
10
0
100
10
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
30
RDS(on)
Limited
PW = 100µs
1 DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
PW = 1ms
TA = 25°C
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
100
DMG6602SVTQ
10
8
VDS = 10V
ID = 3.0A
6
4
2
0
0 2 4 6 8 10
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate Charge
DMG6602SVTQ
Document number: DS37643 Rev. 1 - 2
5 of 10
www.diodes.com
December 2014
© Diodes Incorporated

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